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PDF AON3408 Data sheet ( Hoja de datos )
| Número de pieza | AON3408 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON3408
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON3408 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AON3408 is Pb-free (meets ROHS & Sony
259 specifications).
FFeeaattuurreess
VVDDSS(V(V))==3300VV
IDID==81.18AA (V(VGGSS==1100VV) )
RRDDSS(O(ONN) )<<2144m.5Ωm(ΩVG(VS G=S1=0V10) V)
RRDDSS(O(ONN) )<<2198mmΩΩ(V(VGGSS==44.5.5VV))
RDS(ON) < 45mΩ (VGS = 2.5V)
Rg,Ciss,Coss,Crss Tested
Top View
DFN 3x3
Bottom View
SD
SD
S DG
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
IDSM
IDM
Power Dissipation
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.5
7.2
40
3.0
1.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
32
65
25
Max
42
100
35
D
S
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AON3408.PDF ] | |
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