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PDF AON2701 Data sheet ( Hoja de datos )
| Número de pieza | AON2701 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Freescale | |
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AON2701
P-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
General Description
The AON2701/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or
for DC-DC conversion applications. AON2701 and AON2701L are electrically identical.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = -20V
ID = -3A
(VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -4.5V)
RDS(ON) < 160mΩ (VGS = -2.5V)
RDS(ON) < 200mΩ (VGS = -1.8V)
DFN 2x2 Package A
NC D
DA
KD
G
Top K G S
Bottom
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
Pulsed Drain CurrentB
TA=25°C
TA=70°C
ID
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
SK
MOSFET
-20
±8
-3
-2.3
-15
1.5
0.95
-55 to 150
Schottky
20
2.5
1.5
15
1.45
0.92
-55 to 150
Units
V
V
A
V
A
W
°C
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Symbol
RθJA
RθJA
Typ
35
65
36
67
Max
45
85
47
87
Units
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page  
AON2701
P-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10 200
1 125°C
0.1
25°C
0.01
160
120
80
40
0.001
0 0.2 0.4 0.6 0.8 1 1.2
VF (V)
Figure 12: Schottky Forward Characteristics
0
0 5 10 15 20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.42
0.39
0.36
0.33
0.30
0.27
0.24
0
IF=1A
IF=0.5A
25 50 75 100 125
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
150
10
1
VKA=20V
0.1 VKA=16V
0.01
0
-15
25 50 75 100 125
Temperature (°C)
Figure 15: Schottky Leakage Current vs.
Junction Temperature
150
10 D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=87°C/W
12
0.1
0.01
0.001
0.0001
0.00001
PD
Single Pulse
Ton T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance (Note E)
1000
5/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON2701.PDF ] | |
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