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PDF AOI5N40 Data sheet ( Hoja de datos )
| Número de pieza | AOI5N40 | |
| Descripción | 4.2A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AOI5N40 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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AOD5N40/AOI5N40
400V,4.2A N-Channel MOSFET
General Description
Product Summary
The AOD5N40 & AOI5N40 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
500V@150℃
4.2A
< 1.6Ω
Top View
TO252
DPAK
Bottom View
Top View
TO251A
IPAK
Bottom View
D
D
S
G
AOD5N40
G
S
S
D
G
AOI5N40
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
G
D
S
Maximum
400
±30
4.2
2.8
10
1.7
43
86
5
78
0.63
-50 to 150
300
G
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
38
-
1.33
Maximum
55
0.5
1.6
D
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Jan 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD5N40/AOI5N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
5.0
4.0
3.0
2.0
1.0
0.0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
1000
800
600
400
200
0
0.00001
TJ(Max)=150°C
TA=25°C
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100 1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Rev1: Jan 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOI5N40.PDF ] | |
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