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Número de pieza | AOD4191L | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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No Preview Available ! AOD4191L
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4191 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low gate
resistance. The device well suited for high current
applications.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = -40V
ID = -34A
RDS(ON) < 25mΩ
RDS(ON) < 34mΩ
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
100% UIS Tested!
100% R g Tested!
Top View
D
TO-252
D-PAK Bottom View
D
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current A
Avalanche Current C
TC=25°C
TC=100°C
Repetitive avalanche energy L=0.1mH C
ID
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
S
Maximum
-40
±20
-34
-24
-70
-7
-6
-31
48
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.7
40
2.5
Max
25
50
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page AOD4191L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70 TA=25°C
60
50 TA=150°C
TA=100°C
40
30
TA=125°C
20
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
40
35
30
25
20
15
10
5
0
0
10
1
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
60
50 TA=25°C
40
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOD4191L.PDF ] |
Número de pieza | Descripción | Fabricantes |
AOD4191L | P-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
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