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Número de pieza | AOD4189 | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOD4189 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOD4189
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4189 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
-RoHS Compliant
-Halogen Free*
Top View
D
TO-252
D-PAK Bottom View
Features
VDS (V) = -40V
ID = -40A
RDS(ON) < 22mΩ
RDS(ON) < 29mΩ
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
100% UIS Tested!
100% Rg Tested!
D
GS
SG
G
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-40
±20
-40
-28
-50
-35
61
62.5
31
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case D,F
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page AOD4189
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
70
60
50
40
10
30
20
1
0.01 0.1 1 10 100 1000
Time in Avalache, tA (s)
Figure 12: Single Pulse Avalanche Capability
10
0
0
25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
50 10000
TJ(Max)=150°C
TA=25°C
40
1000
30
100
20
10 10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
1
1E-04 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note G)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
150
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOD4189.PDF ] |
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