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PDF AOD4180 Data sheet ( Hoja de datos )
| Número de pieza | AOD4180 | |
| Descripción | 80V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4180
80V N-Channel MOSFET
SDMOS TM
General Description
The AOD4180 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
80V
54A
< 14mΩ
< 18mΩ
Top View
TO252
DPAK
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
80
±25
54
42
160
10
8
45
100
150
75
3.1
2
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
33
0.8
Max
15
40
1
Rev0: May 2010
www.aosmd.com
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4180
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
175
TA=25°C
100
TA=100°C
150
125
100
10 TA=150°C
TA=125°C
75
50
25
1
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10 D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=40°C/W
In descending order
40 D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
10000
Rev0: May 2010
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOD4180.PDF ] | |
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