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PDF AOD4187 Data sheet ( Hoja de datos )
| Número de pieza | AOD4187 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4187
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4187 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
With the excellent thermal resistance of the DPAK
package, this device is well suited for high current load
applications
VDS (V) = -40V
ID = -45A
RDS(ON) < 17mΩ
RDS(ON) < 23mΩ
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK Bottom View
D
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TC=25°C
Current
TC=100°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
Maximum
-40
±20
-45
-30
-100
-9
-7
-36
65
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
S
Max
20
50
2.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4187
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
TA=25°C
80
60 TA=150°C
40
TA=100°C
TA=125°C
20
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
10000
1000
TJ(Max)=150°C
TA=25°C
100
10
1
1E-04 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOD4187.PDF ] | |
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