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Número de pieza | AOD4186 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Freescale | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOD4186 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOD4186
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for low voltage inverter applications.
Features
VDS (V) =40V
ID = 35A
RDS(ON) < 15mΩ
RDS(ON) < 19mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
35
27
70
10
8
24
29
50
25
2.5
1.6
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.7
40
2.5
Max
25
50
3
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page AOD4186
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 60
50
TA=25°C
TA=150°C
TA=100°C
TA=125°C
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
60
50
40
30
20
10
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
5/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOD4186.PDF ] |
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