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PDF AOD4185 Data sheet ( Hoja de datos )
| Número de pieza | AOD4185 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4185/AOI4185
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4185/AOI4185 uses advanced trench
technology to provide excellent RDS(ON) and low gate
charge. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current applications.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = -40V
ID = -40A
RDS(ON) < 15mΩ
RDS(ON) < 20mΩ
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
TO252
DPAK
Bottom View
D
D
Top View
D
TO-251A
IPAK
Bottom View
D
D
S
G
G
S
DS
G
G
G
SD
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-40
±20
-40
-31
-115
-42
88
62.5
31
2.5
1.6
-55 to 175
Units
V
V
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case D,F
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note B)
175
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Current De-rating (Note B)
10000
1000
TJ(Max)=150°
C
100
10
1
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
150
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1000
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOD4185.PDF ] | |
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