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Número de pieza | AOD417 | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Freescale | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOD417 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOD417
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
high current load applications.
Features
VDS (V) = -30V
ID = -25A
(VGS = -10V)
RDS(ON) < 34mΩ (VGS = -10V)
RDS(ON) < 55mΩ (VGS = -4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C G
Current B,G
TA=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
VGS
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-25
-20
-60
-14
30
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.7
40
2.5
Max
25
50
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page AOD417
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 60
100
ID=-10mA, VGS=0V
50
80
TA=25°C
60
40
30
40
TA=150°C
20
20
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
30
25
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
850
185
60 90
50 TA=25°C
20 40
15 30
10 20
5 10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
5/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOD417.PDF ] |
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