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PDF AOD4100 Data sheet ( Hoja de datos )
| Número de pieza | AOD4100 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4100
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4100 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a High side switch in CPU core
power conversion.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) < 6.5mΩ (VGS = 20V)
RDS(ON) < 9mΩ (VGS = 12V)
RDS(ON) < 12mΩ (VGS = 10V)
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK Bottom View
D
G
GS
SG
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
Current B
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
VGS
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Symbol
RθJA
Maximum Junction-to-Case D
Steady-State
RθJC
Maximum
25
±30
50
49
120
28
118
50
25
6.5
4.2
-55 to 175
Typ
16
43
2
S
Max
19
52
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
80
60
40
150°C
20
25°C
60
50
40
30
20
10
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
100
80
60
40
20
0
0.001 0.01
0.1 1 10
Pulse Width (s)
100 1000
Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note H)
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=52°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOD4100.PDF ] | |
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