|
|
PDF AOI4146 Data sheet ( Hoja de datos )
| Número de pieza | AOI4146 | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AOI4146 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
AOD4146/AOI4146
30V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOD4146/AOI4146 is fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with low
gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
55A
< 5.6mΩ
< 9.5mΩ
TopView
TO252
DPAK
Bottom View
Top View
TO-251A
IPAK
Bottom View
D
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
55
43
190
15
12
50
63
62
31
2.5
1.6
-55 to 175
G
G
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: June 2009
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4146/AOI4146
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=100°C
80
60
TA=150°C
TA=125°C
10
0.000001
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche
capability (Note C)
0.001
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note F)
60 100000
50
10000
TA=25°C
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
1000
100
10
17
5
2
10
1
0.00001 0.001
0.1
10 1000
0
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 1: June 2009
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOI4146.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AOI4146 | 30V N-Channel MOSFET | Alpha & Omega Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |