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PDF AOD4142 Data sheet ( Hoja de datos )
| Número de pieza | AOD4142 | |
| Descripción | POWER Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4142
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOD4142 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
VDS (V) = 25V
ID = 50A
RDS(ON) < 5.3mΩ
RDS(ON) < 9.8mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% R g Tested!
Top View
D
TO-252
D-PAK
Bottom View
D
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentG
Pulsed Drain Current C
TC=25°C
TC=100°C
ID
IDM
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=50uH C
IDSM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
G
Maximum
25
±20
50
43
120
17
13
50
63
50
25
2.5
1.6
-55 to 175
Typ
15
41
2.1
S
Max
20
50
3
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4142
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70 TA=25°C
60
50
40 TA=150°C
TA=100°C
30
20 TA=125°C
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
60
50
40
30
20
10
0
0
100
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
1
1E- 1E- 0.001 0.01 0.1 1
05 04
10 100 1000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 04.301, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOD4142.PDF ] | |
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