|
|
PDF AOI4130 Data sheet ( Hoja de datos )
| Número de pieza | AOI4130 | |
| Descripción | 60V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AOI4130 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
AOD4130/AOI4130
60V N-Channel MOSFET
General Description
The AOD4130/AOI4130 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
60V
30A
< 24mΩ
< 30mΩ
TopView
TO252
DPAK
Bottom View
D
Top View
TO-251A
IPAK
Bottom View
D
DS
G
DG
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
D
S
Maximum
60
±20
30
20
74
6.5
5
27
36.5
52
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12.4
34
2.4
Max
20
50
2.9
G
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: June 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4130/AOI4130
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
60
50
TA=150°C
TA=100°C
40
30
TA=125°C
20
10
10
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001
0.001
0.1
10 1000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 1: June 2011
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOI4130.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AOI4130 | 60V N-Channel MOSFET |  Freescale |
| AOI4130 | 60V N-Channel MOSFET | Alpha & Omega Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |