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PDF AOI4126 Data sheet ( Hoja de datos )
| Número de pieza | AOI4126 | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4126/AOI4126
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOD4126&AOI4126 are fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with
low gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
100V
43A
< 24mΩ
< 30mΩ
Top View
D
TO252
DPAK
Bottom View
D
Top View
TO-251A
IPAK
Bottom View
D
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
43
30
100
7.5
6
28
39
100
50
3
1.9
-55 to 175
G
G
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
8
35
1
Max
10
42
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev1 : May 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4126/AOI4126
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 120
TA=25°C
TA=100°C
90
60
TA=150°C
TA=125°C
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
30
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
60 1000
50 TA=25°C
40 100 17
5
30 2
20 10 10
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
0.01 1 1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=42°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 1: May 2012
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOI4126.PDF ] | |
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