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PDF AOD410L Data sheet ( Hoja de datos )
| Número de pieza | AOD410L | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Rev3: Nov 2004
AOD410, AOD410L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD410 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AOD410L( Green Product ) is offered in
a lead-free package.
Features
VDS (V) = 30V
ID = 8A
RDS(ON) < 65mΩ (VGS = 10V)
RDS(ON) < 105mΩ (VGS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current B
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
8
6
20
8
10
25
12.5
2.1
1.33
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
20
46
5.3
Max
30
60
7
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AOD410L.PDF ] | |
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