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PDF AOD4106 Data sheet ( Hoja de datos )
| Número de pieza | AOD4106 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOD4106
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4106 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a low side switch in SMPS and
general purpose applications. Standard Product
AOD4106 is Pb-free (meets ROHS & Sony 259
specifications). AOD4106L is a Green Product ordering
option. AOD4106 and AOD4106L are electrically
identical.
Features
VDS (V) = 25V
ID = 50A (VGS = 20V)
RDS(ON) < 5mΩ (VGS = 20V)
RDS(ON) < 6.5mΩ (VGS = 12V)
RDS(ON) < 8.1mΩ (VGS = 10V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
TO-252
D-PAK
Top View
Drain Connected to
Tab
D
G
GD S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±30
50
50
180
30
135
75
38
6.25
4
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
1.5
Max
20
50
2.0
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4106
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100 TA=25°C
80
60 TA=150°C
40
20
0
1.00E-06
1.00E-05
1.00E-04
1.00E-03
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
140
120 TJ(max)=150°C
TA=25°C
100
80
60
40
20
0
0.01
0.1
1
10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOD4106.PDF ] | |
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