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Número de pieza | AOD4104 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOD4104 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOD4104
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4104 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.
-RoHS Compliant
-Halogen Free*
VDS (V) = 25V
ID = 75A (VGS = 10V)
RDS(ON) < 3.6mΩ (VGS = 20V)
RDS(ON) < 4.5mΩ (VGS = 12V)
RDS(ON) < 5.4mΩ (VGS = 10V)
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK Bottom View
D
G
SG
GS
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
Current B,G,I
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
VGS
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Case B
Steady-State
Symbol
RθJA
RθJC
Maximum
25
±30
75
75
200
30
135
100
50
2.5
1.6
-55 to 175
Typ
16
40
1
S
Max
20
50
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page AOD4104
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
80
25°C
60
40 150°C
20
0
0.00001
0.0001
0.001
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
120
100
80
60
40
20
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
80 100
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
80
60
40
20
0
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOD4104.PDF ] |
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