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PDF AOI4102 Data sheet ( Hoja de datos )
| Número de pieza | AOI4102 | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD4102/AOI4102
30V N-Channel MOSFET
General Description
The AOD4102/AOI4102 uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in PWM,
load switching and general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
19A
< 37mΩ
< 64mΩ
Top View
D
TO-252
D-PAK Bottom View
Top View
TO251A
IPAK
Bottom View
D
GS
SG
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
D
S
Maximum
30
±20
19
13
30
8
6.5
9
12
21
10
4.2
2.7
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
50
4.5
Max
30
60
7
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: January 2010
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD4102/AOI4102
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
25
20
15 TA=150°C
10
5
TA=25°C
25
20
15
10
5
0
1.00E-07 1.00E-06 1.00E-05 1.00E-04 1.00E-03
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
25
20
15
10
5
0
0
10
1
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
1
0.00001
0.001
0.1
10 1000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: January 2010
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOI4102.PDF ] | |
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