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PDF AOB29S50 Data sheet ( Hoja de datos )
| Número de pieza | AOB29S50 | |
| Descripción | Power Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOT29S50/AOB29S50/AOTF29S50
500V 29A α MOS TM Power Transistor
General Description
Product Summary
The AOT29S50 & AOB29S50 & AOTF29S50 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT29S50L & AOB29S50L & AOTF29S50L
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
600V
120A
0.15Ω
26.6nC
6.3µJ
D
AOT29S50
DS
G
AOTF29S50
S
GD
G
AOB29S50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT29S50/AOB29S50 AOTF29S50
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
29 29*
18 18*
120
7.5
110
608
TC=25°C
Power Dissipation B Derate above 25oC
PD
357 50
2.9 0.4
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
100
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT29S50/AOB29S50
65
0.5
AOTF29S50
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.35
2.5
G
S
AOTF29S50L
29*
18*
37.9
0.3
AOTF29S50L
65
--
3.3
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: March 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page  
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10 RDS(ON)
limited
10µs
100µs
1
0.1 TJ(Max)=150°C
TC=25°C
DC
1ms
10ms
0.1s
1s
0.01
0.1 1 10 100 1000
VDS (Volts)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF29S50L(Note F)
700
600
500
400
300
200
100
0
25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Avalanche energy
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 15: Current De-rating (Note B)
150
Rev0: March 2012
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOB29S50.PDF ] | |
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