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PDF AOB298L Data sheet ( Hoja de datos )
| Número de pieza | AOB298L | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOT298L/AOB298L/AOTF298L
100V N-Channel MOSFET
General Description
Product Summary
The AOT298L & AOB298L & AOTF298L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low
combination of RDS(ON) and Crss. In addition, switching
behavior is well controlled with a soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
100V
58A/33A
< 14.5mΩ
D
G
AOT298L
DS
G AOTF298L
S
GD
G
AOB298L
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT298L/AOB298L
AOTF298L
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
58
41
130
33
26
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
9
7
20
20
TC=25°C
Power Dissipation B TC=100°C
PD
100
50
33
16
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.33
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT298L/AOB298L
15
60
1.5
AOTF298L
15
60
4.5
Units
°C/W
°C/W
°C/W
Rev 0 : Oct. 2011
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page  
AOT298L/AOB298L/AOTF298L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
800
100.0
10.0
RDS(ON)
limited
1.0
DC
10µs
100µs
1ms
10ms
0.1
TJ(Max)=175°C
TC=25°C
0.0
0.01 0.1
1 10
VDS (Volts)
100
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF298L
(Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
1
1000
TJ(Max)=175°C
600 TC=25°C
400
200
0
0.0001 0.001 0.01 0.1
1
10 100
Pulse Width (s)
Figure
13:
Single
Pulse Power
AOTF298L
R(NaotitnegFJ)1u7nction-to-Case
for
5
2
In descending order
10
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0
18
0.0001
0.001
0.01
0.1
1
10
40
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF298L (Note F)
100
50 40
40
30
20
10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 15: Current De-rating for AOTF298
F)
175
(Note
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 16: Power De-rating for AOTF298L (Note
F)
Rev0 : Oct. 2011
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOB298L.PDF ] | |
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