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PDF AOTF2918L Data sheet ( Hoja de datos )
| Número de pieza | AOTF2918L | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOT2918L/AOB2918L/AOTF2918L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2918L & AOB2918L & AOTF2918L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low
combination of RDS(ON) and Crss.
In addition, switching behavior is well controlled with a
soft recovery body diode.This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
100V
90A
< 7mΩ
TO-220
TO-220F
Top View
TO-263
D2PAK
D
D
AOT2918L
DS
G AOTF2918L
S
GD
G
AOB2918L
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT2918L/AOB2918L
AOTF2918L
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
90
70
260
58
45
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
13
10
35
61
TC=25°C
Power Dissipation B TC=100°C
PD
267
133
41
20
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.33
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT2918L/AOB2918L
15
60
0.56
AOTF2918L
15
60
3.6
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2 : Feb 2011
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page  
AOT2918L/AOB2918L/AOTF2918L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
800
100.0
10.0
RDS(ON)
1.0
DC
10µs
100µs
1ms
10ms
0.1
TJ(Max)=175°C
TC=25°C
0.0
0.01
0.1
1 10
VDS (Volts)
100
Figure 9: Maximum Forward Biased
Safe Operating Area for AOTF2918L
1000
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.6°C/W
1
600 TJ(Max)=175°C
TC=25°C
400
200
0
0.001
0.01
0.1
1
10
Pulse Width (s) 17
Figure 10: Single Pulse Power Rating Jun5ction-to-Case
for AOTF2918L (Note F) 2
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
18
0.1
0.01
0.00001
0.0001
Single Pulse
0.001
40
0.01
PD
Ton
T
0.1 1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2918L (Note F)
10
Rev2 : Feb 2011
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOTF2918L.PDF ] | |
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