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PDF AOB290L Data sheet ( Hoja de datos )

Número de pieza AOB290L
Descripción 100V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOT290L/AOB290L
100V N-Channel MOSFET
General Description
Product Summary
The AOT290L/AOB290L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power
losses are minimized due to an extremely low combination
of RDS(ON) and Crss.In addition, switching behavior is well
controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
100V
140A
< 3.5m
(< 3.2m)
Top View
D
TO220
View
Bottom
D
Top View
TO-263
D2PAK
Bottom View
D
D
G DS
S DG
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
100
±20
140
110
500
18
15
100
500
500
250
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
50
0.25
Max
15
60
0.3
G
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev3 : Sep 2011
www.aosmd.com
Page 1 of 6
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AOB290L pdf
AOT290L/AOB290L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
600
TA=25°C
100
TA=150°C
TA=100°C
500
400
300
200
TA=125°C
10
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
100
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
150 10000
TA=25°C
120
1000
90
100
60
10
30
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
1 TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
1
0.001
0.1
10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.01
0.001
0.0001
0.0001
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
10000
Rev3 : Sep 2011
www.aosmd.com
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