|
|
PDF AOTF288L Data sheet ( Hoja de datos )
| Número de pieza | AOTF288L | |
| Descripción | 80V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AOTF288L (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
AOT288L/AOB288L/AOTF288L
80V N-Channel MOSFET
General Description
Product Summary
The AOT288L & AOB288L & AOTF288L uses trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss.This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
80V
46A / 43A
< 9.2mΩ(< 8.9mΩ*)
<12.5mΩ(< 12.2mΩ*)
D
AOT288L
DS
G
AOTF288L
S
GD
S
AOB288L
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT288L/AOB288L
AOTF288L
Drain-Source Voltage
VDS
80
Gate-Source Voltage
VGS
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
46
36
160
43
30
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
10.5
8
35
61
TC=25°C
Power Dissipation B TC=100°C
PD
93.5
46.5
35.5
17.5
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT288L/AOB288L
15
60
1.6
AOTF288L
15
60
4.2
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Dec. 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page  
AOT288L/AOB288L/AOTF288L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100.0
10.0
RDS(ON)
1.0
TJ(Max)=175°C
0.1 TC=25°C
10µs
100µs
1ms
10ms
DC
0.0
0.01
0.1
1
10 100
VDS (Volts)
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF288L
1000
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.2°C/W
1
300
TJ(Max)=175°C
250 TC=25°C
200
150
100
50
0
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) 17
Figure 13: Single Pulse Power Rating Jun5ction-to-Case
for AOTF288L (Note F) 2
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
18
0.1
0.01
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1 40
1
10 100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF288L (Note F)
1000
Rev 0 : Dec. 2012
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOTF288L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AOTF288L | 80V N-Channel MOSFET | Alpha & Omega Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |