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PDF AOT286L Data sheet ( Hoja de datos )
| Número de pieza | AOT286L | |
| Descripción | 80V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOT286L/AOB286L
80V N-Channel MOSFET
General Description
Product Summary
The AOT286L/AOB286L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized
due to an extremely low combination of RDS(ON), Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
80V
70A
< 6.0mΩ
< 7.9mΩ
(< 5.7mΩ∗)
(< 7.6mΩ∗)
Top View
TO220
Bottom View
D
D
Top View
TO-263
D2PAK
Bottom View
D
D
D
G DS
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S
G
Maximum
80
±20
70
55
245
13
10.5
50
125
167
83
2.1
1.3
-55 to 175
G
G
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
48
0.7
Max
15
60
0.9
* Surface mount package TO263
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Nev. 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOT286L/AOB286L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
180
150
TA=25°C
100
TA=150°C
TA=100°C
120
90
60
TA=125°C
10
1
10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
30
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
80 1000
TA=25°C
60
100 17
5
40 2
10 10
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
0.001 0.01 0.1 1 10 0100 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
100
D=Ton/T
10 TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
0.001
PD
Single Pulse
Ton
T
0.01 0.1 1 10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Nov. 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOT286L.PDF ] | |
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