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PDF AOT27S60 Data sheet ( Hoja de datos )

Número de pieza AOT27S60
Descripción Power Transistor
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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No Preview Available ! AOT27S60 Hoja de datos, Descripción, Manual

AOT27S60/AOB27S60/AOTF27S60
600V 27A α MOS TM Power Transistor
General Description
Product Summary
The AOT27S60& AOB27S60 & AOTF27S60 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT27S60L & AOB27S60L & AOTF27S60L
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F(3kVAC;1s)
TO-263
D2PAK
D
700V
110A
0.16
26nC
6µJ
D
AOT27S60
DS
G
AOTF27S60
S
GD
G
AOB27S60
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT27S60/AOB27S60
AOTF27S60
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
600
±30
27
17
110
7.5
110
480
357
2.9
100
20
-55 to 150
27*
17*
50
0.4
300
AOT27S60/AOB27S60
65
0.5
0.35
AOTF27S60
65
--
2.5
G
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 5: Sep 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 page




AOT27S60 pdf
AOT27S60/AOB27S60/AOTF27S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
400
300
200
100
0
25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Avalanche energy
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note B)
150
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.35°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)27S60 (Note F)
10
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF27S60 (Note F)
100
Rev 5: Sep 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/

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