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PDF AOB270AL Data sheet ( Hoja de datos )

Número de pieza AOB270AL
Descripción 75V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOT270AL/AOB270AL
75V N-Channel MOSFET
General Description
Product Summary
The AOT270AL/AOB270AL uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
75V
140A
< 2.6m
< 3.2m
(< 2.4m)
(< 3.0m)
TO220
Top View
Bottom
D
D
Top View
TO-263
Bottom View
D
D
G DS
S DG
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
75
±20
140
110
560
21.5
17
120
720
500
250
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
50
0.25
Max
15
60
0.3
G
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Dec. 2012
www.aosmd.com
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AOB270AL pdf
AOT270AL/AOB270AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
600
TA=25°C
TA=100°C
500
400
100 TA=150°C
TA=125°C
300
200
100
10
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
150 10000
TA=25°C
120
1000
90
100
60
10
30
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=60°C/W
0.1
1
0.001
0.1
10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.001
0.0001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
10000
Rev 0 : Dec. 2012
www.aosmd.com
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