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PDF AOB266L Data sheet ( Hoja de datos )
| Número de pieza | AOB266L | |
| Descripción | 60V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOT266L/AOB266L/AOTF266L
60V N-Channel MOSFET
General Description
Product Summary
The AOT266L & AOB266L & AOTF266L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
60V
140A/78A
< 3.5mΩ (< 3.2mΩ∗)
< 4.0mΩ (< 3.8mΩ∗)
D
AOT266L
DS
G
AOTF266L
S
GD
S
AOB266L
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT266L/AOB266L
AOTF266L
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
140
110
450
78
55
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
18
14
90
405
TC=25°C
Power Dissipation B TC=100°C
PD
268
134
45.5
22.5
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT266L/AOB266L
15
60
0.56
AOTF266L
15
60
3.3
* Surface mount package TO263
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2 : May 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page  
AOT266L/AOB266L/AOTF266L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100.0
RDS(ON)
limited
10.0
1.0
TJ(Max)=175°C
0.1 TC=25°C
10µs
100µs
1ms
10ms
DC
0.0
0.01
0.1
1 10
VDS (Volts)
100
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF266L
1000
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.3°C/W
1
600
TJ(Max)=175°C
500 TC=25°C
400
300
200
100
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) 17
Figure 13: Single Pulse Power Rating Jun5ction-to-Case
for AOTF266L (Note F) 2
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
18
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
40
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF266L (Note F)
100
1000
Rev 2 : May 2012
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOB266L.PDF ] | |
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