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PDF AOB2618L Data sheet ( Hoja de datos )

Número de pieza AOB2618L
Descripción 60V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOT2618L/AOB2618L/AOTF2618L
60V N-Channel MOSFET
General Description
Product Summary
The AOT2618L & AOB2618L & AOTF2618L uses trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss.
This device
is ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
60V
23A
< 19m
< 25m
D
AOT2618L
DS
G
AOTF2618L
S
GD
G
AOB2618L
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT2618L/AOB2618L
AOTF2618L
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
23
18
70
22
16
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
7
5.5
23
26
TC=25°C
Power Dissipation B TC=100°C
PD
41.5
20.5
23.5
11.5
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT2618L/AOB2618L
15
60
3.6
AOTF2618L
15
60
6.4
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : July 2012
www.aosmd.com
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Free Datasheet http://www.datasheet4u.com/

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AOB2618L pdf
AOT2618L/AOB2618L/AOTF2618L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100.0
10µs
10.0
RDS(ON)
100µs
1.0
0.1 TJ(Max)=175°C
TC=25°C
1ms
10ms
DC
0.0
0.01
0.1
1 10
VDS (Volts)
100
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF2618L
1000
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=6.4°C/W
1
300
TJ(Max)=175°C
250 TC=25°C
200
150
100
50
0
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) 17
Figure 13: Single Pulse Power Rating Jun5ction-to-Case
for AOTF2618L (Note F) 2
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
18
0.1
0.01
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
40
0.1
1
10 100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF2618L (Note F)
1000
Rev 0 : July 2012
www.aosmd.com
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