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Número de pieza | AOB256L | |
Descripción | 150V N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOB256L (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOB256L
150V N-Channel MOSFET
General Description
Product Summary
The AOB256L uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
150V
19A
< 85mΩ
< 100mΩ
Top View
TO-263
D2PAK
Bottom View
D
D
D
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
150
±20
19
13.5
35
3
2.5
9
4
83
41.5
2.1
1.3
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
50
1.5
Max
15
60
1.8
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: August 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page AOB256L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 100
TA=25°C
10
TA=150°C
TA=100°C
TA=125°C
80
60
40
20
1
1 10
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
100
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note F)
20
15
10
5
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
1E-05
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.001
Single Pulse
PD
Ton
T
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: August 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOB256L.PDF ] |
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