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Número de pieza | AOB1608L | |
Descripción | 60V N-Channel Rugged Planar MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOB1608L (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOT1608L/AOB1608L
60V N-Channel Rugged Planar MOSFET
General Description
Product Summary
The AOT1608L/AOB1608L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low RDS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
60V
140A
< 7.6mΩ
Top View
D
TO220
Bottom View
D
Top View
TO-263
D2PAK
Bottom View
DD
S
GD
G
SD
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
60
±20
140
100
256
11
9
113
638
333
166
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
48
0.35
Max
15
60
0.45
G
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: May 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page AOT1608L/AOB1608L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 500
160
120 TA=25°C
TA=150°C
80
TA=125°C
TA=100°C
40
400
300
200
100
0
1
10
100
1000
10000
Time in avalanche, tA (ms)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note F)
200 10000
160 TA=25°C
1000
120 17
100 5
2
80 10
10
40
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
1
0.0001
0.01
1
100 0 10000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.01
Single Pulse
PD
Ton
T
0.1 1 10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Rev0: May 2011
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOB1608L.PDF ] |
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