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Número de pieza | AOTF15S60 | |
Descripción | Power Transistor | |
Fabricantes | Freescale | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOTF15S60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOT15S60/AOB15S60/AOTF15S60
600V 15A α MOS TM Power Transistor
General Description
The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
700V
63A
0.29Ω
16nC
3.6µJ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT15S60/AOB15S60 AOTF15S60L
Drain-Source Voltage
VDS
600
Gate-Source Voltage VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
15
10
63
2.4
86
173
15*
10*
TC=25°C
Power Dissipation B Derate above 25oC
PD
208
1.67
27.8
0.22
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
100
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
Parameter
Symbol AOT15S60/AOB15S60 AOTF15S60L
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
65
0.5
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.6
4.5
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page AOT15S60/AOB15S60/AOTF15S60
600V 15A α MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 20
160
15
120
10
80
40 5
0
25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Avalanche energy
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.6°C/W
0.1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.001
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)15S60 (Note F)
10
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=4.5°C/W
0.1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF15S60L (Note F)
100
5/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOTF15S60.PDF ] |
Número de pieza | Descripción | Fabricantes |
AOTF15S60 | Power Transistor | Freescale |
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