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PDF AOT12N50 Data sheet ( Hoja de datos )
| Número de pieza | AOT12N50 | |
| Descripción | 12A N-Channel MOSFET | |
| Fabricantes | Freescale | |
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AOT12N50/AOB12N50/AOTF12N50
500V, 12A N-Channel MOSFET
General Description
The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
600V@150℃
12A
< 0.52Ω
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT12N50/AOB12N50 AOTF12N50
Drain-Source Voltage VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
12
8.4
48
5.5
454
908
5
12*
8.4*
TC=25°C
Power Dissipation B Derate above 25oC
PD
250
2
50
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT12N50/AOB12N50
65
0.5
AOTF12N50
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.5
2.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page  
AOT12N50/AOB12N50/AOTF12N50
500V, 12A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N50/AOB12N50 (Note F)
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N50 (Note F)
100
5/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOT12N50.PDF ] | |
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