|
|
Número de pieza | AOT11S65 | |
Descripción | Power Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOT11S65 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS TM Power Transistor
General Description
Product Summary
The AOT11S65 & AOB11S65 & AOTF11S65 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT11S65L & AOB11S65L & AOTF11S65L
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
750V
45A
0.399Ω
13.2nC
2.9µJ
D
AOT11S65
S
D
G
AOTF11S65
S
GD
G
AOB11S65
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT11S65/AOB11S65
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
11
8
TC=25°C
Power Dissipation B Derate above 25oC
PD
198
1.6
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Symbol AOT11S65/AOB11S65
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.63
AOTF11S65
650
±30
11*
8*
45
2
60
120
39
0.31
100
20
-55 to 150
300
AOTF11S65
65
--
3.25
G
AOTF11S65L
11*
8*
31
0.25
AOTF11S65L
65
--
4
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Mar 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page AOT11S65/AOB11S65/AOTF11S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
RDS(ON)
10 limited
10µs
100µs
1 1ms
DC 10ms
0.1
TJ(Max)=150°C
TC=25°C
0.1s
1s
0.01
1 10 100 1000
VDS (Volts)
Figure 13: Maximum Forward Biased Safe Operating
Area for AOTF11S65L(Note F)
150
120
90
60
30
0
25
50 75 100 125 150
TCASE (°C)
Figure 14: Avalanche energy
175
12
10
8
6
4
2
0
0
25 50 75 100 125
TCASE (°C)
Figure 15: Current De-rating (Note B)
150
Rev1: Mar 2012
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet AOT11S65.PDF ] |
Número de pieza | Descripción | Fabricantes |
AOT11S60 | Power Transistor | Alpha & Omega Semiconductors |
AOT11S65 | Power Transistor | Freescale |
AOT11S65 | Power Transistor | Alpha & Omega Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |