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PDF AOB11S60 Data sheet ( Hoja de datos )
| Número de pieza | AOB11S60 | |
| Descripción | Power Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOT11S60/AOB11S60/AOTF11S60
600V 11A α MOS TM Power Transistor
General Description
Product Summary
The AOT11S60& AOB11S60 & AOTF11S60 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT11S60L & AOB11S60L & AOTF11S60L
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F(3kVAC;1s)
TO-263
D2PAK
D
700V
45A
0.399Ω
11nC
2.7µJ
D
AOT11S60
DS
G
AOTF11S60
S
D
G
G
AOB11S60
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT11S60/AOB11S60 AOTF11S60
Drain-Source Voltage
VDS
600
Gate-Source Voltage VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
11
8
45
2
60
120
11*
8*
TC=25°C
Power Dissipation B Derate above 25oC
PD
178
1.4
38
0.3
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
100
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
Parameter
Symbol AOT11S60/AOB11S60 AOTF11S60
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
65
0.5
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.7
3.25
G
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 5: Sep 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOT11S60/AOB11S60/AOTF11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 12
90 9
60 6
30 3
0
25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Avalanche energy
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.000001
Single Pulse
PD
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)11S60 (Note F)
10
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF11S60 (Note F)
100
Rev 5: Sep 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOB11S60.PDF ] | |
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