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PDF STL8N10LF3 Data sheet ( Hoja de datos )
| Número de pieza | STL8N10LF3 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL8N10LF3
Features
N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ III
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet — production data
Order code
STL8N10LF3
VDS
100 V
RDS(on) max
ID
35 mΩ
7.8 A (1)
1. The value is rated according to Rthj-pcb
■ Logic level VGS(th)
■ 175 °C maximum junction temperature
■ 100% avalanche rated
Applications
■ Switching applications
■ Automotive
Description
This device is an N-channel enhancement mode
Power MOSFET produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order code
STL8N10LF3
Marking
8N10LF3
3
!-V
Package
PowerFLAT™ 5x6
Packaging
Tape and reel
January 2013
This is information on a product in full production.
Doc ID 023977 Rev 1
1/13
www.st.com
13
Free Datasheet http://www.datasheet4u.com/
1 page  
STL8N10LF3
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 7.8 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.8 A,
di/dt = 100 A/µs,
VDD=48 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Min Typ. Max Unit
- 7.8 A
- 31.2 A
- 1.3 V
42.5
- 87
4.08
ns
nC
A
Doc ID 023977 Rev 1
5/13
Free Datasheet http://www.datasheet4u.com/
5 Page 
STL8N10LF3
Package mechanical data
Figure 19. PowerFLAT 5x6 recommended footprint (dimensions are in mm)
Footprint
Doc ID 023977 Rev 1
11/13
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STL8N10LF3.PDF ] | |
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