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PDF 2SK4101FG Data sheet ( Hoja de datos )

Número de pieza 2SK4101FG
Descripción N-Channel Silicon MOSFET
Fabricantes Sanyo 
Logotipo Sanyo Logotipo



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Ordering number : ENA1365
2SK4101FG
SANYO Semiconductors
DATA SHEET
2SK4101FG
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
650 V
Gate-to-Source Voltage
Drain Current (DC)
VGSS
IDc *1
IDpack *2
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYOs ideal heat dissipation condition)*3
±30 V
7A
6.4 A
Drain Current (Pulse)
Allowable Power Dissipation
IDP PW10μs, duty cycle1%
PD Tc=25°C (SANYOs ideal heat dissipation condition)*3
28 A
2.0 W
35 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
EAS
IAV
194 mJ
6A
Note :*1 Shows chip capability.
*2 Package limited.
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6A
*5 L10mH, Single pulse
Marking : K4101
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
N2608QB MS IM TC-00001729 No. A1365-1/6
Free Datasheet http://www.datasheet4u.com/

1 page




2SK4101FG pdf
2SK4101FG
10
VDS=200V
9 ID=7A
8
VGS -- Qg
7
6
5
4
3
2
1
0
0 10 20
Total Gate Charge, Qg -- nC
2.5 PD -- Ta
30
IT12224
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12226
120 EAS -- Ta
ASO
7
5
3
IDP=28A
2
10
7
IDc(*1)=7A
5
3
IDpack(*2)=6.4A
2
1.0
7
5
PWD1C0oμp1se0r10a0tmimosns1m1s00μ1s0μs
3
2
Operation in
this area is
0.1
7
limited by RDS(on).
5
3
2 Tc=25°C
0.01 Single pulse
0.1 2 3 5 7 1.0
*1. Shows chip capability
*2. SANYO's ideal heat dissipation condition
2 3 5 7 10 2 3 5 7 100 2 3 5 71000
40
Drain-to-Source
PD
Voltage,
-- Tc
VDS
--
V
IT14235
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT12227
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Ambient Temperature, Ta -- °C
IT10478
No. A1365-5/6
Free Datasheet http://ww

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