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PDF 2SD1164-Z Data sheet ( Hoja de datos )
| Número de pieza | 2SD1164-Z | |
| Descripción | SILICON POWER TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
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2SD1164-Z
SILICON POWER TRANSISTOR
Preliminary Data Sheet
R07DS0254EJ0400
Rev.4.00
Feb 24, 2011
<R>
DESCRIPTION
The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
FEATURES
• High hFE = 2 000 to 30 000
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
CHARACTERISTICS
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage
VCEO
60
V
Base to Emitter Voltage
VEBO
8.0
V
Collector Current (DC)
Collector Current (pulse) Note 1
Total Power Dissipation (TA = 25°C) Note 2
Junction Temperature
Storage Temperature
IC(DC)
IC(pulse)
PT
Tj
Tstg
2
4
2.0
150
−55 to +150
A
A
W
°C
°C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R07DS0254EJ0400 Rev.4.00
Feb 24, 2011
Page 1 of 4
Free Datasheet http://www.datasheet4u.com/
1 page  
Revision History
2SD1164-Z Data Sheet
Rev.
−
4.00
Date
Jul 2006
Feb 24, 2011
Page
−
p.1
Description
Summary
Previous No. : D18286EJ3V0DS00
Modification of equivalent circuit
All trademarks and registered trademarks are the property of their respective owners.
C-1
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SD1164-Z.PDF ] | |
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