DataSheet.es    


PDF SI4128DY Data sheet ( Hoja de datos )

Número de pieza SI4128DY
Descripción N-Channel 30-V (D-S) MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo



Hay una vista previa y un enlace de descarga de SI4128DY (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! SI4128DY Hoja de datos, Descripción, Manual

New Product
N-Channel 30-V (D-S) MOSFET
Si4128DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.024 at VGS = 10 V
30
0.030 at VGS = 4.5 V
ID (A)a
10.9
9.7
Qg (Typ.)
3.8 nC
SO-8
S1
S2
S3
G4
Top View
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
Notebook PC
- System Power
- Load Switch
D
G
Ordering Information: Si4128DY-T1-E3 (Lead (Pb)-free)
Si4128DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
10.9
8.7
7.5b, c
6b, c
30
4.2
2b, c
5
3.2
2.4b, c
1.5b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
42
19
Maximum
53
25
Unit
V
A
W
°C
Unit
°C/W
Document Number: 69004
S-83089-Rev. C, 29-Dec-08
www.vishay.com
1
Free Datasheet http://www.datasheet4u.com/

1 page




SI4128DY pdf
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12 5
4
9
3
6
2
3
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si4128DY
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69004
S-83089-Rev. C, 29-Dec-08
www.vishay.com
5
Free Datasheet http://www.datasheet4u.com/

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet SI4128DY.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SI4128DYN-Channel 30-V (D-S) MOSFETVishay
Vishay

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar