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Número de pieza | LT1E40A | |
Descripción | (LT1x40A) Leadless Chip LED Device | |
Fabricantes | ETC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LT1E40A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Leadless Chip LED Device
LT1t40A series
LT1t40A series
2125 Size, 0.8mm Thickness,
Leadless Chip LED Devices
s Outline Dimensions
(Unit : mm)
s Radiation Diagram
(Ta=25˚C)
2.0 0.8
-20˚ 0˚ +20˚
-40˚ 100 +40˚
80
12
Cathode mark
1.2
Recommended PWB pattern for soldering
Device center
1.25 1.1
1.25
1.Plating area
Resist
0.4 0.4 2.Pin connections
1 Cathode
2 Anode
1
2
3.Unspecified tolerance:±0.1
U type: There is Anode mark on the device because polarity faces in the
opposite direction.
60
-60˚ +60˚
40
20
-80˚ +80˚
0
X
-20˚ 0˚ +20˚
100
-40˚ +40˚
80
60
-60˚ +60˚
40
20
-80˚ +80˚
0
Y
s Absolute Maximum Ratings
(Ta=25˚C)
Power dissipation Forward current Peak forward current Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
Model No. Radiation color Radiation material P
IF
IFM*1
(mA/˚C)
VR
Topr
Tstg Tsol*2
(mW) (mA)
(mA)
DC Pulse
(V)
(˚C) (˚C) (˚C)
LT1U40A
LT1P40A
LT1D40A
LT1S40A
Red(Super-luminosity) GaAlAs on GaAlAs
Red GaP
Red GaAsP on GaP
Sunset orange GaAsP on GaP
75
23
84
84
30
10
30
30
50 0.40 0.67 4
50 0.13 0.67 5
50 0.40 0.67 5
50 0.40 0.67 5
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-40 to +100
-40 to +100
-40 to +100
-40 to +100
350
350
350
350
LT1H40A Yellow
GaAsP on GaP
84 30
50 0.40 0.67 5
-30 to +85 -40 to +100 350
LT1E40A Yellow-green GaP
LT1K40A Green
GaP
84 30
84 30
50 0.40 0.67 5
50 0.40 0.67 5
-30 to +85 -40 to +100
-30 to +85 -40 to +100
350
350
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s Electro-optical Characteristics
Lens type Model No.
Milky
diffusion
LT1U40A
LT1P40A
LT1D40A
LT1S40A
LT1H40A
LT1E40A
LT1K40A
Forward voltage
VF(V)
TYP MAX
1.85 2.5
1.9 2.3
2.0 2.8
2.0 2.8
2.0 2.8
2.1 2.8
2.1 2.8
Peak emission wavelength
λp(nm)
IF
TYP (mA)
660 20
695 5
635 20
610 20
585 20
570 20
555 20
Luminous intensity
IV(mcd) IF
TYP (mA)
35.6 20
1.3 5
11.9 20
9.4 20
10.8 20
19.0 20
5.0 20
Spectrum radiation bandwidth
∆λ(nm) IF
TYP (mA)
20 20
100 5
35 20
35 20
30 20
30 20
25 20
Reverse current
IR(µA) VR
MAX (V)
100 3
10 4
10 4
10 4
10 4
10 4
10 4
(Ta=25˚C)
Terminal capacitance Page for
Ct(pF)
characteristics
TYP (MHZ) diagrams
25 1 →
55 1 →
20 1 →
15 1 →
35 1 →
35 1 →
40 1 →
(Notice) ¡In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
93devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet) ¡Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
Free Datasheet http://www.datasheet4u.com/
1 page UR series
Forward Current Derating Curve
60
50
Forward Current vs. Forward Voltage(Note)
(Ta=25˚C)
100
50
40 10
5.0
30
20 1.0
0.5
10
0
-25 0
25 50 75 85 100 125
Ambient temperature Ta(˚C)
0.1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Forward voltage VF(V)
Peak Forward Current Derating Curve
60
50
Luminous Intensity vs. Forward Current(Note)
1000
(Ta=25˚C)
500
200
40 100
50
30
20
20
10
0
-25 0 25 50 75 85 100 125
Ambient temperature Ta(˚C)
10
5.0
2.0
1.0
0.1 0.2
0.5 1 2
5 10 20
Forward current IF(mA)
50
Note)Characteristics shown in diagrams are typical values. (not assurance value)
Luminous Intensity vs. Ambient Temperature(Note)
1000
(Ta=25˚C)
500
100
50
10
5.0
1.0
-20 0 20 40 60 80 100 120
Ambient temperature Ta(˚C)
Duty Ratio vs. Peak Forward Current
(Ta=25˚C)
500
200
100
50
20
10
5.0
2.0
1.0
1/50 1/20 1/10 1/5 1/2 1
Duty ratio DR
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet LT1E40A.PDF ] |
Número de pieza | Descripción | Fabricantes |
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