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PDF AUIRFR6215 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR6215 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRFR6215 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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AUTOMOTIVE GRADE
PD-96302
Features
AUIRFR6215
HEXFET® Power MOSFET
O P-Channel
O Low On-Resistance
O Dynamic dV/dT Rating
O 175°C Operating Temperature
O Fast Switching
O Fully Avalanche Rated
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automotive Qualified *
Description
G
D V(BR)DSS
-150V
:RDS(on) max. 0.295
S ID
-13A
D
Specifically designed for Automotive applications of
HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a
wide variety of other applications.
Absolute Maximum Ratings
G
Gate
S
GD
D-Pak
AUIRFR6215
D
Drain
S
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
chPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dhSingle Pulse Avalanche Energy (Thermally limited)
chAvalanche Current
chRepetitive Avalanche Energy
ePeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
300
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Parameter
hjRθJC
iRθJA
Junction-to-Case
Junction-to-Ambient(PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
04/13/10
Free Datasheet http://www.datasheet4u.com/
1 page  
AUIRFR6215
2000
1600
1200
800
400
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
Coss
Crss
0A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 I D = -6.6A
16
VDS = -120V
VDS = -75V
VDS = -30V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13 A
0 20 40 60 80
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10 TJ = 175°C
TJ = 25°C
1
0.1
0.2
VGS = 0V A
0.6 1.0 1.4 1.8
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
10 100µs
1ms
TC = 25°C
TJ = 175°C
1 Single Pulse
10ms
1 10 100
-VDS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
AUIRFR6215
Ordering Information
Base part
AUIRFR6215
AUIRFR6215
AUIRFR6215
AUIRFR6215
Package Type
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
Complete Part Number
AUIRFR6215
AUIRFR6215TR
AUIRFR6215TRL
AUIRFR6215TRR
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRFR6215.PDF ] | |
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