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PDF PHK04P02T Data sheet ( Hoja de datos )
| Número de pieza | PHK04P02T | |
| Descripción | P-channel vertical D-MOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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PHK04P02T
P-channel vertical D-MOS logic level FET
Rev. 02 — 14 December 2010
Product data sheet
1. Product profile
1.1 General description
Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using vertical D-MOS technology. This product is designed and qualified for use
in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Suitable for high frequency
applications due to fast switching
characteristics
Suitable for logic level gate drive
sources
Suitable for very low gate drive
sources voltage
1.3 Applications
Battery powered applications
High-speed digital interfaces
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 150 °C
Tsp = 25 °C
Ptot total power
dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
VGS = -2.5 V; ID = -1 A; Tj = 25 °C
VGS = -4.5 V; ID = -1 A; Tj = 25 °C
QGD
gate-drain charge
VGS = -4.5 V; ID = -1 A;
VDS = -10 V; Tj = 25 °C
Min Typ Max Unit
- - -16 V
- - -4.6 A
6
- - 5W
- 117 150 mΩ
- 80 120 mΩ
- 1.83 - nC
Free
Datasheet
1 page  
NXP Semiconductors
PHK04P02T
P-channel vertical D-MOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS drain leakage current
IGSS gate leakage current
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS gate-source charge
QGD gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
gfs transfer conductance
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
ID = -10 µA; VGS = 0 V; Tj = 25 °C
ID = -1 mA; VDS = VGS; Tj = 25 °C
ID = -1 mA; VDS = VGS; Tj = 150 °C
VDS = -13 V; VGS = 0 V; Tj = 25 °C
VDS = -13 V; VGS = 0 V; Tj = 150 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = -2.5 V; ID = -1 A; Tj = 25 °C
VGS = -2.5 V; ID = -1 A; Tj = 150 °C
VGS = -1.8 V; ID = -0.5 A; Tj = 25 °C
VGS = -4.5 V; ID = -1 A; Tj = 25 °C
ID = -1 A; VDS = -10 V; VGS = -4.5 V;
Tj = 25 °C
VDS = -13 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C
VDS = -10 V; RL = 10 Ω; VGS = -8 V;
RG(ext) = 6 Ω; Tj = 25 °C; ID = -1 A
VDS = -13 V; ID = -1 A; Tj = 25 °C
IS = -0.62 A; VGS = 0 V; Tj = 25 °C
IS = -0.5 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = -12.8 V; Tj = 25 °C
Min Typ Max Unit
-16 - - V
-0.4 -0.6 -
V
-0.1 - - V
- -50 -100 nA
- -13 -100 µA
- 10 100 nA
- 10 100 nA
- 117 150 mΩ
- 175 230 mΩ
- 140 180 mΩ
- 80 120 mΩ
- 7.2 -
- 1.7 -
- 1.83 -
- 528 -
- 200 -
- 57 -
- 2-
- 4.5 -
- 45 -
- 20 -
1.5 4.5 -
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
- -0.62 -1.3 V
- 75 - ns
- 69 - nC
PHK04P02T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
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NXP Semiconductors
PHK04P02T
P-channel vertical D-MOS logic level FET
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PHK04P02T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 December 2010
© NXP B.V. 2010. All rights reserved.
11 of 12
Free Datasheet http://www.datasheet4u.com/
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