DataSheet.es    


PDF AOD2910 Data sheet ( Hoja de datos )

Número de pieza AOD2910
Descripción N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de AOD2910 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! AOD2910 Hoja de datos, Descripción, Manual

AOD2910
100V N-Channel MOSFET
General Description
Product Summary
The AOD2910 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
100V
31A
< 24m
< 33m
Top View
D
TO252
DPAK
Bottom View
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
100
±20
31
21.5
80
6.5
5
15
11
53.5
26.5
2.5
1.6
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16
41
2.2
Max
20
50
2.8
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Sep. 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 page




AOD2910 pdf
AOD2910
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=100°C
60
50
10 TA=150°C
TA=125°C
40
30
20
10
1
1 10 100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
40
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
0.1
10000
1000
100
10
TA=25°C
17
5
2
10
1
1E-05
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.01
0.001
1E-05
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Sep. 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet AOD2910.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
AOD2910N-Channel MOSFETAlpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD2916N-Channel MOSFETAlpha & Omega Semiconductors
Alpha & Omega Semiconductors

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar