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PDF AO7410 Data sheet ( Hoja de datos )
| Número de pieza | AO7410 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Freescale | |
| Logotipo |  |
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AO7410
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7410 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
applications. Standard Product AO7410 is Pb-free (meets ROHS & Sony 259 specifications). AO7410L
is a Green Product ordering option. AO7410 and AO7410L are electrically identical.
Features
VDS (V) = 30V
ID = 1.6 A (VGS = 10V)
RDS(ON) < 90mΩ (VGS = 10V)
RDS(ON) < 100mΩ (VGS = 4.5V)
RDS(ON) < 175mΩ (VGS = 2.5V)
SC-70
(SOT-323)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
1.6
1.3
10
0.35
0.22
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
300
340
280
Max
360
425
320
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
www.freescale.net.cn
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO7410.PDF ] | |
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