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PDF AO7417 Data sheet ( Hoja de datos )

Número de pieza AO7417
Descripción P-Channel Enhancement Mode Field Effect Transistor
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AO7417
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7417/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for
use in buck convertor. AO7417 and AO7417L are electrically identical.
-RoHS Compliant
-AO7417L is Halogen Free
Features
VDS (V) = -20V
ID = -2 A
(VGS = -4.5V)
RDS(ON) < 80mΩ (VGS = -4.5V)
RDS(ON) < 100mΩ (VGS = -2.5V)
RDS(ON) < 125mΩ (VGS = -1.8V)
RDS(ON) < 150mΩ (VGS = -1.5V)
SC-70-6
(SOT-363)
Top View
D
D 16 D
D 25 D
G 34 S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
10 Sec
Steady State
-20
±8
-2 -1.9
-1.7 -1.6
-20
0.63 0.57
0.4 0.36
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
160
180
130
Max
200
220
160
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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