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PDF AO4406AL Data sheet ( Hoja de datos )
| Número de pieza | AO4406AL | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4406AL
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4406AL uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
VDS (V) = 30V
ID = 12A
RDS(ON) < 11.5mΩ
RDS(ON) < 15.5mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R g Tested!
SOIC-8
D
G
S
D
SD
SD
SD
GD
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=70°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
12
10
100
22
24
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
1 page  
AO4406AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=75°C/W
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AO4406AL.PDF ] | |
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