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PDF XC7SH125 Data sheet ( Hoja de datos )
| Número de pieza | XC7SH125 | |
| Descripción | Bus buffer/line driver | |
| Fabricantes | NXP Semiconductors | |
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XC7SH125
Bus buffer/line driver; 3-state
Rev. 01 — 4 September 2009
Product data sheet
1. General description
XC7SH125 is a high-speed Si-gate CMOS device. It provides one non-inverting buffer/line
driver with 3-state output. The 3-state output is controlled by the output enable input (OE).
A HIGH at OE causes the output to assume a high-impedance OFF-state.
2. Features
I Symmetrical output impedance
I High noise immunity
I Low power dissipation
I Balanced propagation delays
I SOT353-1, SOT753, SOT886, and SOT891 package options
I ESD protection:
N HBM JESD22-A114E: exceeds 2000 V
N MM JESD22-A115-A: exceeds 200 V
N CDM JESD22-C101C: exceeds 1000 V
I Specified from −40 °C to +125 °C
3. Ordering information
Table 1. Ordering information
Type number
Package
Temperature range
XC7SH125GW
−40 °C to +125 °C
XC7SH125GV
XC7SH125GM
−40 °C to +125 °C
−40 °C to +125 °C
XC7SH125GF
−40 °C to +125 °C
Name
TSSOP5
SC-74A
XSON6
XSON6
Description
Version
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
SOT353-1
plastic surface-mounted package; 5 leads
SOT753
plastic extremely thin small outline package; no SOT886
leads; 6 terminals; body 1 × 1.45 × 0.5 mm
plastic extremely thin small outline package;
no leads; 6 terminals; body 1 × 1 × 0.5 mm
SOT891
Free Datasheet http://www.datasheet4u.com/
1 page  
NXP Semiconductors
XC7SH125
Bus buffer/line driver; 3-state
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; For test circuit see Figure 9.
Symbol Parameter Conditions
tpd propagation A to Y; see Figure 7
delay
VCC = 3.0 V to 3.6 V
CL = 15 pF
CL = 50 pF
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
ten enable time OE to Y; see Figure 8
VCC = 3.0 V to 3.6 V
CL = 15 pF
CL = 50 pF
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
tdis disable time OE to Y; see Figure 8
VCC = 3.0 V to 3.6 V
CL = 15 pF
CL = 50 pF
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
CPD power
per buffer;
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
[1]
[2]
- 4.7 8.0 1.0 9.5 1.0 11.5 ns
- 6.6 11.5 1.0
13.0
1.0
14.5 ns
[3]
- 3.4 5.5 1.0
6.5
1.0
7.0 ns
- 4.8 7.5 1.0
8.5
1.0
9.5 ns
[1]
[2]
- 5.0 8.0 1.0 9.5 1.0 11.5 ns
- 6.9 11.5 1.0
13.0
1.0
14.5 ns
[3]
- 3.6 5.1 1.0
6.0
1.0
6.5 ns
- 4.9 7.5 1.0
8.5
1.0
9.5 ns
[1]
[2]
- 6.0 9.7 1.0
11.5
1.0
12.5 ns
- 8.3 13.2 1.0
15.0
1.0
16.5 ns
[3]
- 4.1 6.8 1.0
8.0
1.0
8.5 ns
- 5.7 8.8 1.0
10.0
1.0
11.0 ns
[4] - 9 -
-
-
-
- pF
[1] tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
XC7SH125_1
Product data sheet
Rev. 01 — 4 September 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
Free Datasheet ht
5 Page 
NXP Semiconductors
XC7SH125
Bus buffer/line driver; 3-state
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm
L1
e
b
123
L
4×
(1)
6
e1
5
e1
4
6× A
(1)
A1
D
SOT891
E
terminal 1
index area
01
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
A1
max
b
D
E
e
mm
0.5
0.04
0.20
0.12
1.05
0.95
1.05
0.95
0.55
Note
1. Can be visible in some manufacturing processes.
e1
0.35
L
0.35
0.27
L1
0.40
0.32
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT891
Fig 13. Package outline SOT891 (XSON6)
XC7SH125_1
Product data sheet
Rev. 01 — 4 September 2009
2 mm
EUROPEAN
PROJECTION
ISSUE DATE
05-04-06
07-05-15
© NXP B.V. 2009. All rights reserved.
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