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PDF MBRT40030 Data sheet ( Hoja de datos )
| Número de pieza | MBRT40030 | |
| Descripción | (MBRT40020 - MBRT40040R) Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBRT40030 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V VRRM
• Isolation Type Package
MBRT40020 thru MBRT40040R
VRRM = 20 V - 100 V
IF = 400 A
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions MBRT40020 (R) MBRT40030 (R) MBRT40035 (R) MBRT40040 (R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
TC ≤ 100 °C
IF,SM TC = 25 °C, tp = 8.3 ms
Tj
Tstg
20
14
20
400
3000
-40 to 150
-40 to 175
30
21
30
400
3000
-40 to 150
-40 to 175
35
25
35
400
3000
-40 to 150
-40 to 175
40
28
40
400
3000
-40 to 150
-40 to 175
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions MBRT40020 (R) MBRT40030(R) MBRT40035 (R) MBRT40040 (R) Unit
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
VF IF = 200 A, Tj = 25 °C
IR
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
RthJC
0.75
1
20
0.14
0.75 0.75
11
20 20
0.14 0.14
0.75 V
1
20
mA
0.14 °C/W
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBRT40030.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBRT40030 | (MBRT40020 - MBRT40040R) Silicon Power Schottky Diode | GeneSiC |
| MBRT40030 | (MBRT40020 - MBRT40040R) Silicon Power Schottky Diode |  America Semiconductor |
| MBRT40030R | (MBRT40020 - MBRT40040R) Silicon Power Schottky Diode | GeneSiC |
| MBRT40030R | (MBRT40020 - MBRT40040R) Silicon Power Schottky Diode | GeneSiC |
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