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PDF MBRT200100R Data sheet ( Hoja de datos )
| Número de pieza | MBRT200100R | |
| Descripción | (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V VRRM
• Isolation Type Package
MBRT20045 thru MBRT200100R
VRRM = 20 V - 100 V
IF = 200 A
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions MBRT20045 (R) MBRT20060 (R) MBRT20080 (R) MBRT200100 (R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
TC ≤ 125 °C
IF,SM TC = 25 °C, tp = 8.3 ms
Tj
Tstg
45
32
45
200
1500
-40 to 150
-40 to 175
60
42
60
200
1500
-40 to 150
-40 to 175
80
57
80
200
1500
-40 to 150
-40 to 175
100
70
100
200
1500
-40 to 150
-40 to 175
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions MBRT20045 (R) MBRT20060(R) MBRT20080 (R) MBRT200100 (R) Unit
Diode forward voltage
VF IF = 100 A, Tj = 25 °C
0.75
0.8
0.88 0.88 V
Reverse current
IR
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
1
20
1
20
1
20
1
20
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.18 0.18 0.18
0.18 °C/W
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBRT200100R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBRT200100 | (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode | GeneSiC |
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| MBRT200100R | (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode | GeneSiC |
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