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Número de pieza TSDF12830YS
Descripción two AGC Amplifiers
Fabricantes Vishay 
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VISHAY
TSDF12830YS
Vishay Semiconductors
Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage
with Integrated Band Switch for One-Line Switching
Comments
MOSMIC - MOS Monolithic Integrated Circuit
Description
The Dual-MOSMIC® TSDF12830YS, assembled in
the well-known SOT-363 plastic package, is a combi-
nation of two different MOSMIC® amplifiers with com-
mon Source and common Gate 2 leads and an
integrated switch. One of the MOSMIC stages is opti-
mized for use in VHF applications, especially regard-
ing cross modulation performance and noise figure at
lower VHF frequencies, whereas the other stage is
optimized for use in UHF applications regarding gain
and noise figure performance at higher frequencies of
UHF range. The integrated switch is operated by the
Gate 1 bias of the UHF amplifier on Pin 6. All of the
Gates are protected against excessive input voltage
surges by integrated antiserial diodes between them-
selves and Source.
Features
• Two differently optimized amplifiers in a single
package. One of them has a fully internal self-bias-
ing network on chip and the other has a partly inte-
grated bias for easy Gate 1 switch-off with PNP
switching transistors inside PLL -IC
• Internal switch for saving lines on PCB layout as
well as external components
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS
resp. 28 mS
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V
Applications
Low noise gain controlled VHF and UHF input stages
with 5 V supply voltage, such as in digital and analog
TV tuners and in other multimedia and communica-
tions equipment.
65 4
VY WM5
CW
12 3
18597
Electrostatic sensitive device.
Observe precautions for handling
Typical Application
AGC
C
C
VHF
in
1
2
G2 (common)
RFC
+5 V
G1 AMP1
D3
C
VHF
out
VGG
UHF
in
RG1
C
6
AMP2
D4
G1 S (common)
5
VGG = 5 V: UHF AMP is on; VHF AMP is off
VGG = 0 V: UHF AMP is off; VHF AMP is on
(0 = shorted to Ground or open)
RFC
+5 V
C UHF
out
18598
Mechanical Data
Case: SOT-363 Plastic case
Weight: approx. 6.0 mg
V - Vishay
Y - Year, is variable for digit from 0 to 9
(e.g. 3 = 2003, 4 = 2004)
CW - Calendar Week, is variable for
number from 01 to 52
Number of Calendar Week is always indicating
place of pin 1
Pinning:
1 = Gate 1 (VHF amplifier), 2 = Gate 2 (common)
3 = Drain (VHF amplifier), 4 = Drain (UHF amplifier),
5 = Source (common), 6 = Gate1 (UHF amplifier)
Document Number 85171
Rev. 1.2, 25-Aug-04
www.vishay.com
1
Free Datasheet http://www.datasheet4u.com/

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TSDF12830YS pdf
VISHAY
TSDF12830YS
Vishay Semiconductors
Amplifier 2
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 k, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
|y21s|
27
31
35 mS
Gate 1 input capacitance
Cissg1
1.7 2.1 pF
Feedback capacitance
Crss
20
fF
Output capacitance
Coss
0.9
pF
Power gain
GS = 2 mS, BS = BSopt,
Gps
33
dB
GL = 0.5 mS, BL = BLopt,
f = 200 MHz
GS = 3.3 mS, BS = BSopt,
Gps
30
dB
GL = 1 mS, BL = BLopt,
f = 400 MHz
GS = 3.3 mS, BS = BSopt,
Gps
25
dB
GL = 1 mS, BL = BLopt,
f = 800 MHz
AGC range
VDS = 5 V, VG2S = 0.5 to 4 V,
f = 800 MHz
Gps
40
50
dB
Noise figure
GS = GL = 20 mS, BS = BL = 0,
f = 50 MHz
F
5.0 7.0 dB
GS = 2 mS, GL = 0.5 mS,
BS = BSopt, f = 400 MHz
F
1.0 1.5 dB
GS = 3.3 mS, GL = 1 mS,
BS = BSopt, f = 800 MHz
F
1.3 2.0 dB
Cross modulation
Input level for
k = 1 % @ 0 dB
AGC fw = 50 MHz,
funw = 60 MHz
Xmod
90
dBµV
Input level for
k = 1 % @ 40 dB
AGC fw = 50 MHz,
funw = 60 MHz
Xmod
100
105
dBµV
Remark on improving intermodulation behavior:
By setting RG1 smaller than 100 k, typical value of IDSO will raise and improved intermodulation behavior will be performed.
Document Number 85171
Rev. 1.2, 25-Aug-04
www.vishay.com
5
Free Datasheet http://www.datasheet4u.com/

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